? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c, r gs = 1m 250 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 100 a i dm t c = 25 c, pulse width limited by t jm 400 a i a t c = 25 c40a e as t c = 25 c3j p d t c = 25 c 445 w dv/dt i s i dm , v dd v dss , t j 150c 20 v/ns t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol 1ma t = 1 second 3000 v~ t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 n/lb. weight 3 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 250 v v gs(th) v ds = v gs , i d = 4ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 60a, note 1 17 m n-channel enhancement mode avalanche rated fast intrinsic diode IXFZ140N25T ds100267(05/10) v dss = 250v i d25 = 100a r ds(on) 17m t rr 200ns features z silicon chip on direct-copper bond (dcb) substrate z isolated substrate - excellent thermal transfer - increased temperature and power cycling capability - high isolation voltage (2500 v~) z very high current handling capability z fast intrinsic diode z avalanche rated advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications advance technical information (electrically isolated tab) gigamos tm hiperfet tm power mosfet de475 g = gate d = drain s = source isolated tab s s g d d d
ixys reserves the right to change limits, test conditions, and dimensions. IXFZ140N25T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 80 135 s c iss 19 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1500 pf c rss 185 pf t d(on) 33 ns t r 29 ns t d(off) 92 ns t f 22 ns q g(on) 255 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 70a 90 nc q gd 62 nc r thjc 0.28 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 140 a i sm repetitive, pulse width limited by t jm 560 a v sd i f = 60a, v gs = 0v, note 1 1.3 v t rr 200 ns i rm 9.3 a q rm 600 nc resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 70a r g = 1 (external) i f = 70a, v gs = 0v -di/dt = 100a/ s v r = 75v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2010 ixys corporation, all rights reserved IXFZ140N25T fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ds - volts i d - amperes v gs = 10v 8v 7v 6 v 5 v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 320 0 2 4 6 8 10 12 14 16 18 v ds - volts i d - amperes v gs = 10v 8v 5 v 6 v 7 v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 00.511.522.533.544.5 v ds - volts i d - amperes v gs = 10v 8v 7v 6 v 5 v fig. 4. r ds(on) normalized to i d = 70a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 140a i d = 70a fig. 5. r ds(on) normalized to i d = 70a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 40 80 120 160 200 240 280 320 i d - amperes r ds(on) - normalized v gs = 10 v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXFZ140N25T fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 3.54.04.55.05.56.06.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 200 220 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 220 240 260 q g - nanocoulombs v gs - volts v ds = 125v i d = 70a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds( on ) limit
? 2010 ixys corporation, all rights reserved ixys ref: IXFZ140N25T (9w)5-25-10-a de475 (ixfz) outline s s g d d d s s g d d d fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w IXFZ140N25T
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